MIM CAPACITOR BY BATI4O9 AND METHOD FOR FABRICATING THE SAME

摘要

An MIM capacitor using BaTi4O9 and a manufacturing method thereof are provided to raise an integration scale of a semiconductor device by satisfying requirements of an ITRS(International Technology Roadmap or Semiconductor). An MIM(Metal-Insulator-Metal) capacitor includes a substrate(105), which has a Pt/Ti/SiO2/Si structure, a dielectric thin film layer(150), and an upper electrode layer(160). A Pt layer(140) is a lower electrode and has a thickness of 70 nm. An SiO2 layer(120) protects a surface of an Si layer and used as a base layer. A BaTi4O9 thin film is formed on the substrate as the dielectric thin film. The upper electrode layer, which is used as an upper electrode of the MIM capacitor, is formed on the dielectric thin film.