NOVEL SILICON-GERMANIUM HYDRIDES AND METHODS FOR MAKING AND USING SAME

摘要

The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherein n1 is 0 1, 2 or 3 to satisfy valency and wherein n2 is independently 0, 1, 2 or 3 for each Ge atom in the compound, to satisfy valency.