| 摘要 |
A high-output power amplifier apparatus in a wireless communication system is provided to attenuate deterioration due to temperature of a transistor by adjusting a gate bias to be inputted into a drive amplifier and a main amplifier. A high-output power amplifier apparatus includes temperature sensors(513,523), controllers, and amplifiers(501,503). The temperature sensors measure temperature and transmit the measured values to the controllers. The controllers adjust external voltages as gate bias voltages corresponding to the measured temperature by using a gate bias table including stored temperature levels. The amplifiers amplify RF signals by using the adjusted gate bias voltages. The gate bias table indicates the gate bias voltages to be inputted into the amplifiers according to each temperature level.
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