| 摘要 |
A method for manufacturing a thin film transistor substrate is provided to form an organic semiconductor having an interfacial characteristic with a gate insulating layer, by injecting an organic semiconductor solution, which is obtained by dissolving an organic semiconductor material in organic solvent, into an opening and drying the organic semiconductor solution under vacuum atmosphere. A gate line(121) is formed on an insulating substrate(110), wherein the gate line includes a gate electrode(124) and an end portion(129). A gate insulating layer(140) is formed on the substrate and the gate line. A data line(171) and a drain electrode(175) are formed on the gate insulating layer, wherein the data line includes a source electrode(173) and an end portion(179). A passivation layer(180) is formed on the data line, the drain electrode, and the gate insulating layer. A plurality of contact holes(181,182,185) and an opening(184) are formed in the passivation layer. An organic semiconductor solution is injected into the opening through an inkjet printing method using a nozzle. The organic semiconductor solution contains an organic semiconductor material, a first organic solvent of solid state, and a second organic solvent. The first organic solvent has a melting point higher than the normal temperature. The second organic solvent has a higher solubility than the first organic solvent. The resultant substrate is transferred in a drying chamber. Meanwhile, the organic semiconductor solution exposed to the air is firstly dried under the normal temperature to form a preliminary organic semiconductor. The preliminary organic semiconductor is dried to form an organic semiconductor(154) by heating the resultant substrate to a temperature above the melting point of the first organic solvent under steam atmosphere within the chamber. The organic semiconductor has an interfacial characteristic with the gate insulating layer and a uniform thickness. A protection member(186) is formed on the organic semiconductor. Auxiliary contact members(81,82) and a pixel electrode(191) are formed on the passivation layer. |
