发明名称 |
METHOD AND APPARATUS FOR INSPECTING DEFECTS ON MASK |
摘要 |
<p>A method and an apparatus for inspecting defects on a mask are provided to detect the defects by irradiating light onto a surface of a wafer and obtaining an image on the wafer. A mask including a test pattern for inspecting a defect on a transparent substrate is prepared(110). A wafer defect inspection unit including a defect inspection part and a wafer stage is prepared(120). The wafer defect inspection part detects a defect by irradiating light onto a surface of a wafer and obtaining an image on the basis of the reflected light. A wafer is loaded on the wafer stage. The wafer stage is exchanged with a mask stage at the height corresponding to the height of the surface of the wafer loaded on the wafer stage(130). The mask is loaded on the mask stage. A mask defect is detected by operating the wafer defect inspection unit, irradiating the light onto the surface of the mask, and obtaining the image(190).</p> |
申请公布号 |
KR20080072414(A) |
申请公布日期 |
2008.08.06 |
申请号 |
KR20070011154 |
申请日期 |
2007.02.02 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
OH, SUNG HYUN;CHOI, YONG KYOO;CHO, BYUNG SUP |
分类号 |
H01L21/027;G01N21/956;G03F1/84;H01L21/66 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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