| 摘要 |
The apparatus. e.g. a chromatograph, has a buried silicon oxide layer 104, e.g. between two silicon layers 102, 106, with at least one fluid channel, particularly a nanochannel. The channel can be made in the buried layer 104 by an etching method that selectively removes silicon oxide but not silicon. Thus, one dimension of the resulting fluid channel is limited by the thickness of the buried oxide layer 104. It is possible to manufacture a very thin buried oxide layer 104 with great precision, thus a nanochannel can be fabricated in a controlled manner. Moreover, in addition to buried oxide, any pairs of substances with a high etch ratio with respect to each other can be used in the same way. |
