发明名称 |
METHOD FOR FORMING THE NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
A method for forming a nitride semiconductor light emitting device is provided to decompose Mg and H from each other within a p type nitride semiconductor layer at low thermal processing temperature by using a hydrogen absorption property of a Pd element. An n type nitride semiconductor layer(120), an active layer(130), a p type nitride layer(140) are sequentially formed on a substrate(110). A Pd/Zn alloy layer(200) is formed on the residual region except for a p type electrode region of the p type nitride semiconductor layer. A thermal process for the p type nitride semiconductor layer including the Pd/Zn alloy layer is performed. The Pd/Zn alloy layer is removed from the p type nitride semiconductor layer. An upper surface of the n type nitride semiconductor layer is partially exposed by mesa-etching partially the p type nitride semiconductor layer, the active layer, and the n type nitride semiconductor layer. An n type electrode is formed on the exposed part of the n type nitride semiconductor layer. A p type electrode is formed on the p type electrode region except for the Pd/Zn alloy layer.
|
申请公布号 |
KR100850780(B1) |
申请公布日期 |
2008.08.06 |
申请号 |
KR20070049633 |
申请日期 |
2007.05.22 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KIM, SUN WOON;PARK, SUNG JU;KIM, JA YOUN;KWON, MIN KEE;LEE, DONG JU;HAN, JAE HO |
分类号 |
H01L33/32;H01L33/40;H01L33/42 |
主分类号 |
H01L33/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|