发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
<p>To reduce variation among TFTs in manufacture of a semiconductor device including n-type thin film transistors and p-type thin film transistors. Further, another object of the present invention is to reduce the number of masks and manufacturing steps, and manufacturing time. A method of manufacturing a semiconductor device includes forming an island-shaped semiconductor layer of a first thin film transistor, then, forming an island-shaped semiconductor layer of the second thin film transistor. In the formation of the island-shaped semiconductor layer of the second thin film transistor, a gate insulating film in contact with the island-shaped semiconductor layer of the second thin film transistor is used as a protection film (an etching stopper film) for the island-shaped semiconductor layer of the first thin film transistor.</p> |
申请公布号 |
EP1953813(A2) |
申请公布日期 |
2008.08.06 |
申请号 |
EP20080001057 |
申请日期 |
2008.01.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
HOSOYA, KUNIO;FUJIKAWA, SAISHI |
分类号 |
H01L21/77;H01L27/12 |
主分类号 |
H01L21/77 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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