发明名称 PIEZOELECTRIC THIN FILM DEVICE
摘要 The present invention is directed to improving characteristics of a piezoelectric thin film device. A piezoelectric thin film filter including four film bulk acoustic resonators has a configuration where a filter section and a base substrate are bonded to each other via an adhesive layer, the filter section including a piezoelectric thin film which cannot stand up individually under its own weight, the flat base substrate mechanically supporting the filter section. As a piezoelectric material constructing the piezoelectric thin film, it is desirable to use a single-crystal material including no grain boundary, selected from crystal, lithium niobate, lithium tantalite, lithium tetraborate, zinc oxide, potassium niobate, and langasite.
申请公布号 KR100850696(B1) 申请公布日期 2008.08.06
申请号 KR20070018728 申请日期 2007.02.23
申请人 发明人
分类号 H03H9/15;H01L41/09;H01L41/18;H01L41/22;H01L41/313;H01L41/337;H03H9/00;H03H9/17;H03H9/54 主分类号 H03H9/15
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