| 摘要 |
<p>A first electronic component (1), in particular a semiconductor die and a second electronic component (2), in particular a substrate, each with a main surface, are bonded to each other by applying at least one metal layer (3,3') on each of the main surfaces. Then the semiconductor die and the substrate are aligned against each other with their main surfaces facing each other. The die and substrate with the metal layers (3,3') in between form an arrangement, which is introduced into a compression means. Afterwards the arrangement is compressed in the compression means at a pressure in a range of 10 to 35 MPa, and heat in a range of 230 to 275 °C is applied to the arrangement, by which temperature and pressure the electronic components (1,2) are bonded to each other. In particular the at least one metal layer may comprise silver and/or indium and the temperature and pressure used for bonding result in a reduced bonding time and allow bonding to be performed in ambient air atmosphere without oxidation of the indium.</p> |
