发明名称 Condenser in a monolithic circuit
摘要 <p>The capacitor has successive conducting layers (19, 23, 27) separated by insulation layers (21, 25), and terminals (31, 33) in which the conducting and insulation layers are extended on a silicon substrate (1) and in hollowed portions i.e. rectangular shaped grooves (17), of the substrate. The terminal (31) is connected to the even order conducting layer (23), and the other terminal (33) is connected to the odd order conducting layers (19, 27). The insulation layers are made of silicon nitride. The conducting layers are made of doped polycrystalline silicon.</p>
申请公布号 EP1953778(A1) 申请公布日期 2008.08.06
申请号 EP20080101038 申请日期 2008.01.29
申请人 ST MICROELECTRONICS S.A. 发明人 GARDES, PASCAL;BLANCHARD, STEPHANE;BOUFNICHEL, MOHAMED
分类号 H01G4/38 主分类号 H01G4/38
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