SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device and a manufacturing method thereof are provided to lower a writing voltage of the semiconductor device by using a laminate of a silicon film and germanium. A semiconductor device includes a memory device having a first electrode(11), a silicon film(13), a germanium film(14), and a second electrode(15). The silicon film is formed on the first electrode. The germanium film is formed on the silicon film. The second electrode is formed on the germanium film. The first and second electrodes are made of different materials. A work function of the material contained in the first electrode is greater than that of the material contained in the second material.