| 摘要 |
<p>An electro-optical device substrate, an electro-optical device, and an electronic apparatus are provided to reduce the generation of light leakage current in a pixel switching TFT(Thin Film Transistor) and realize a high-quality image. In an upper layer of a semiconductor layer(1a), a gate electrode(3a) has a body portion(31a), a first elongated portion(32a), and a second elongated portion(32b). The body portion functions as the gate electrode. While an LCD(Liquid Crystal Device) is operated, a scanning signal is supplied from a scanning line(11a) and a gate voltage corresponding to the scanning signal is applied to the body portion, thereby turning on a TFT. The first elongated portion is elongated from the body portion along a Y-direction from a side of the semiconductor layer so that the first elongated portion is adjacent to a pixel electrode-sided LDD(Lightly Doped Drain) region(1c). The second elongated portion is elongated from at least a portion of the first elongated portion, which is closer to a pixel electrode-sided source-drain region(1e) than the body portion, along an X-direction.</p> |
