| 摘要 |
<p>A semiconductor light emitting device is provided to improve power efficiency of the light emitting device by controlling optical reflection on light capturing and/or current emitting regions in a transparent electrode based on an optical loss at the transparent electrode. A semiconductor structure includes first and second conductive semiconductor layers(21,23). First and second electrodes(30,40) are formed in the first and second conductive semiconductor layers in a light emitting structure(25). A transparent insulation film(18) is formed on at least a portion of the second conductive semiconductor layer. The second electrode includes first and second layers(41,42). The first layer of a transparent conductive film coats at least a portion of the second conductive semiconductor layer. The second layer is formed on at least a portion of the transparent insulation film and connected to the first layer. Optical reflecting units are formed on a surface of the first layer and an interface between the transparent insulation film and the semiconductor structure. A second layer surface of the transparent insulation film is separated farther from the semiconductor structure than the surface of the first layer.</p> |
