| 摘要 |
Disclosed herein are a poly type thin film transistor substrate and a fabricating method thereof, which can reduce the number of processing steps without any process defects. The poly type thin film transistor substrate comprises forming transparent lower conductive layer and upper conductive layers on a substrate; forming a photo-resist pattern on the upper conductive layer; patterning the upper conductive layer by using the photo-resist pattern as a mask; ashing the photo-resist pattern so as to remain on the upper conductive layer; patterning the lower conductive layer by a dry etching method using the patterned upper conductive layer as a mask; and removing the remaining photo-resist pattern.
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