SEMICONDUCTOR MEMORY DEVICE CAPABLE OF REDUCING STATIC NOISE MARGIN

摘要

A semiconductor memory device is provided to reduce static noise margin by using one MOS transistor in a read port of a memory cell included in the semiconductor memory device. A latch(210) includes an input port and an output port. A read port(220) is connect to the output port and is switched on the basis of the value stored in the latch, and includes a first pass gate implemented with one MOS(Metal Oxide Semiconductor), and determines the stored value according to the switched state of the first pass gate. A write port(230) inputs the new value to the input port on the basis of a second selection signal.