MEMORY MODULE HAVING SYMMETRIC SIGNAL CHANNEL STRUCTURE

摘要

A memory module having a symmetric signal channel structure is provided to deliver a signal at a super high speed by improving a signal integrity using symmetrically arranged signal lines. A dielectric material is condensed in a substrate(110). A via-hole is formed to penetrate upper and lower surfaces of the substrate. A reference signal line(113) is arranged on a center of the substrate and electrically connected to the via-hole. At least one source/ground line(114,116) is electrically connected to the via-hole and arranged to be symmetrical with respect to the reference signal line. At least one connection signal line(115,117) is electrically connected to the via-hole and arranged to be symmetrical with respect to the reference signal line. The signals from the reference signal line are equally delivered to the source/ground lines and the connection signal line.