发明名称 Thin film transistor array panel and manufacturing method thereof
摘要 A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor including a gate electrode connected to the first signal line and having an edge substantially parallel to the first signal line, a source electrode connected to the second signal line, and a drain electrode overlapping the edge of the gate electrode; and a pixel electrode connected to the drain electrode.
申请公布号 US7408200(B2) 申请公布日期 2008.08.05
申请号 US20060612141 申请日期 2006.12.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUN SAHNG-IK;JEON JAE-HONG;CHOI KWON-YOUNG;LEE JEONG-YOUNG
分类号 G02F1/1368;G02F1/136;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/417;H01L29/786 主分类号 G02F1/1368
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