发明名称 |
Thin film transistor array panel and manufacturing method thereof |
摘要 |
A thin film transistor array panel is provided, which includes: a substrate; a first signal line formed on the substrate; a second signal line formed on the substrate and intersecting the first signal line; a thin film transistor including a gate electrode connected to the first signal line and having an edge substantially parallel to the first signal line, a source electrode connected to the second signal line, and a drain electrode overlapping the edge of the gate electrode; and a pixel electrode connected to the drain electrode.
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申请公布号 |
US7408200(B2) |
申请公布日期 |
2008.08.05 |
申请号 |
US20060612141 |
申请日期 |
2006.12.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUN SAHNG-IK;JEON JAE-HONG;CHOI KWON-YOUNG;LEE JEONG-YOUNG |
分类号 |
G02F1/1368;G02F1/136;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/417;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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