发明名称 Charged particle beam application system
摘要 During the writing operation, the wafer potential is dynamically detected and corrected. By doing so, the positional accuracy of the circuit patterns written on a wafer can be improved. After a contact resistance between a wafer and a earth pin is measured, the current flowing from the wafer to the ground potential via the earth pin is measured. Then, based on the measurement result, the potential difference is given between the wafer and the ground potential.
申请公布号 US7408760(B2) 申请公布日期 2008.08.05
申请号 US20050221815 申请日期 2005.09.09
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION;CANON KABUSHIKI KAISHA 发明人 TANIMOTO SAYAKA;SODA YASUNARI;SUGAYA MASAKAZU;TOOYAMA HIROSHI;TSUTSUMI TAKESHI;SOMEDA YASUHIRO
分类号 H01L21/683 主分类号 H01L21/683
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