发明名称 |
FIREFET AND FABRICATING METHOD OF THE SAME |
摘要 |
A FIREFET(Fin and Recess channel MOSFET) and a manufacturing method thereof are provided to improve a current driving performance of the FIREFET by reducing source and drain resistances. An active region is surrounded by a field oxide film on a semiconductor substrate. Source/drain(14,16) are formed on the active region with a fin-type channel between them. A recess hole is formed under the source/drain and the fin channel. A recess channel is formed under the fin channel at one side of the recess hole. Gate oxide films(80) are formed on a surface of the recess hole including the recess channel, side surfaces of the source/drain, and the fin channel. A gate(90a) surrounds the recess channel and the fin channel on the gate oxide film and is formed between the recess hole and the source/drain.
|
申请公布号 |
KR20080071822(A) |
申请公布日期 |
2008.08.05 |
申请号 |
KR20070010165 |
申请日期 |
2007.01.31 |
申请人 |
SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION |
发明人 |
PARK, BYUNG GOOK;SONG, JAE YOUNG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|