发明名称 Nonvolatile semiconductor memory device
摘要 A nonvolatile semiconductor memory device is provided for a high-powered system without the need for an additional system setting process to set the system initialization state after power-on to the previous state. The nonvolatile semiconductor memory device comprises a pull-up driving unit configured to include a plurality of nonvolatile cells for storing inputted data and to pull up a storage node, a pull-down driving unit configured to pull down the storage node, and a plurality of data registers including a data input/output unit configured to selectively input/output data between a bit line and the storage node depending on a voltage applied to a word line.
申请公布号 US7408801(B2) 申请公布日期 2008.08.05
申请号 US20070834542 申请日期 2007.08.06
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG HEE BOK;AHN JIN HONG
分类号 G11C11/00;G11C11/34 主分类号 G11C11/00
代理机构 代理人
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