发明名称 |
Capture of residual refractory metal within semiconductor device |
摘要 |
There is provided a semiconductor device with a configuration in which a dummy silicide area 11 is provided in the vicinity of a non-silicide area 2 to easily capture residual refractory metals, resulting in an improved yield by preventing the trapping of residual refractory metals into a non-silicide area and thereby reducing a junction leakage within the non-silicide area.
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申请公布号 |
US7408239(B2) |
申请公布日期 |
2008.08.05 |
申请号 |
US20070650978 |
申请日期 |
2007.01.09 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
KAMINO TAKESHI;TSUTSUMI TOSHIAKI;KODAMA SHUJI;OHNO TAKIO |
分类号 |
H01L21/28;H01L29/00;H01L21/02;H01L21/24;H01L21/3205;H01L21/822;H01L23/26;H01L23/52;H01L27/04;H01L27/08 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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