发明名称 HALLOW SPHERE FOR SEMICONDUCTOR AND PREPARATION METHOD THEREOF
摘要 A semiconductor hallow sphere and a preparation method thereof are provided to obtain various shape in the structure of hollow sphere effectively in a simple process by introducing ultrasonic ray and a solution comprising hydrophilic polymer for the preparation process. A semiconductor hollow sphere has particle size of 30-50nm, and the sphere is formed in a reaction of selenium compound with metal salt having metal element selected from Cd, Zn, Hg, Mn and Mg. A preparation method of the semiconductor hollow sphere comprises steps of: preparing an aqueous solution comprising hydrophilic polymer; dissolving metal salt in the prepared solution, and on the other hand, preparing a selenium solution by dissolving selenium compound in sodium sulfite solution; mixing the selenium solution with the aqueous solution comprising hydrophilic polymer and metal salt; and irradiating ultrasonic ray for the mixture. The hydrophilic polymer comprises at least one hydrophilic group selected from a group consisting of -OH, -SO3H and -COOH, and the polymer has the number mean molar weight of 10,000-100,000. To the solution comprising hydrophilic polymer, the selenium compound is added directly or added as a selenium solution having dissolved selenium compound in a solution having sodium sulfite. The irradiation of ultrasonic ray is carried out at 20KHz and 455-450W for 5-30 minutes. Further, a concentration of hydrophilic polymer is 1 to 3 wt.%.
申请公布号 KR20080071856(A) 申请公布日期 2008.08.05
申请号 KR20070010273 申请日期 2007.01.31
申请人 PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION 发明人 PARK, MYOUNG GUK;KIM, YANG DO;KANG, GIL YOUN
分类号 B82B1/00;B82B3/00 主分类号 B82B1/00
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