发明名称 |
Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator |
摘要 |
The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.
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申请公布号 |
US7408287(B2) |
申请公布日期 |
2008.08.05 |
申请号 |
US20060602330 |
申请日期 |
2006.11.21 |
申请人 |
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发明人 |
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分类号 |
H01L41/083;H03H9/54;H01L41/08;H03H3/02;H03H3/04;H03H9/02;H03H9/17;H03H9/56;H03H9/70 |
主分类号 |
H01L41/083 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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