发明名称 Film bulk acoustic wave resonator, film bulk acoustic wave resonator filter and method of manufacturing film bulk acoustic wave resonator
摘要 The present invention provides a film bulk acoustic wave resonator (FBAR) filter that can keep the Q factor high. The FBAR filter comprises a first FBAR with a first resonant frequency and a second FBAR with a second resonant frequency, formed on a same substrate. The FBAR filter has such a structure that a first underlayer is formed between the substrate and a first bottom electrode layer and a second underlayer is formed between the substrate and a second bottom electrode layer, the first underlayer thickness being different from the second underlayer thickness.
申请公布号 US7408287(B2) 申请公布日期 2008.08.05
申请号 US20060602330 申请日期 2006.11.21
申请人 发明人
分类号 H01L41/083;H03H9/54;H01L41/08;H03H3/02;H03H3/04;H03H9/02;H03H9/17;H03H9/56;H03H9/70 主分类号 H01L41/083
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