| 摘要 |
A transfer transistor of a CMOS image sensor is described, including a substrate of a first type, a gate dielectric layer on the substrate, a gate on the gate dielectric layer, a first doped region of the first type, a buried channel region of the first or second type, a second doped region of the first type, and source/drain regions of the second type. The first doped region is in the substrate directly under the gate dielectric layer under the gate, the buried channel region is in the substrate under the first doped region, and the second doped region is in the substrate under the buried channel region. The source/drain regions are in the substrate beside the gate.
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