发明名称 |
Semiconductor device and manufacturing process therefore |
摘要 |
A semiconductor device which can prevent a leak current between a silicide layer on a polysilicon and another part, as well as a manufacturing process therefor. The semiconductor device includes neighboring n- and p-type polysilicons; and a silicide layer thereon extending from the n-type polysilicon to the p-type polysilicon. The silicide layer is formed over the upper surfaces of the n- and p-type polysilicons except the periphery thereof.
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申请公布号 |
US7407880(B2) |
申请公布日期 |
2008.08.05 |
申请号 |
US20040002307 |
申请日期 |
2004.12.03 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
IZUMI KATSUYA |
分类号 |
H01L21/28;H01L21/8238;H01L21/3205;H01L21/8242;H01L23/52;H01L27/108;H01L29/94 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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