发明名称 Device, system, and method for a trench capacitor having micro-roughened semiconductor surfaces
摘要 Some embodiments of the invention include a memory cell having a vertical transistor and a trench capacitor. The trench capacitor includes a capacitor plate with a roughened surface for increased surface area. Other embodiments are described and claims.
申请公布号 US7408216(B2) 申请公布日期 2008.08.05
申请号 US20060484541 申请日期 2006.07.11
申请人 发明人
分类号 H01L27/108 主分类号 H01L27/108
代理机构 代理人
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