GROWTH OF VERY UNIFORM SILICON CARBIDE EPITAXIAL LAYERS

摘要

An improved chemical vapor deposition method is disclosed that increases the uniformity of silicon carbide epitaxial layers and that is particularly usef ul for obtaining thicker epitaxial layers. The method comprises heating a react or to a temperature at which silicon carbide source gases will form an epitaxia l layer of silicon carbide on a substrate in the reactor; and then directing a flow of source and carrier gases through the heated reactor to form an epitaxial layer of silicon carbide on the substrate with the carrier gases comprising a blend of hydrogen and a second gas in which the second gas has a thermal conductivity that is less than the thermal conductivity of hydrogen so that the source gases deplete less as they pass through the reactor than the y would if hydrogen is used as the sole carrier gas.