发明名称 |
Low resistance contact structure and fabrication thereof |
摘要 |
Embodiments of the present invention provide a method of fabricating a contact structure in a layer of dielectric material between a semiconductor device and a back-end-of-line interconnect. The method includes creating at least one contact opening in said layer of dielectric material; forming a first TiN film through a chemical-vapor deposition process, said first TiN film lining said contact opening; and forming a second TiN film through a physical vapor deposition process, said second TiN film lining said first TiN film. A contact structure fabricated according to embodiments of the invention is also provided.
|
申请公布号 |
US7407875(B2) |
申请公布日期 |
2008.08.05 |
申请号 |
US20060470349 |
申请日期 |
2006.09.06 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WONG KEITH KWONG HON;DEHAVEN PATRICK W.;DESHPANDE SADANAND V.;MADAN ANITA |
分类号 |
H01L21/20;H01L21/44 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|