发明名称 |
Dynamic random access memory trench capacitors |
摘要 |
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
|
申请公布号 |
US7408214(B2) |
申请公布日期 |
2008.08.05 |
申请号 |
US20040947909 |
申请日期 |
2004.09.23 |
申请人 |
AMBERWAVE SYSTEMS CORPORATION |
发明人 |
BULSARA MAYANK;CURRIE MATTHEW T.;LOCHTEFELD ANTHONY J. |
分类号 |
H01L21/8242;H01L29/94 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|