| 摘要 |
<p>A processing apparatus is provided to extend a lifetime of a chamber by preventing the chamber from being eroded due to a plasma or cleaning gas. A processing apparatus includes a process container(11) and a process unit(10). A substrate to be processed is contained in the process container. The process unit performs a plasma treatment on the substrate in the process container. A film(14) is formed on an exposed substrate in the process container by using 3a-group element chemicals in a periodic table. A thickness of the film is greater than 50 mum and a breakdown voltage of the film is higher than 4 kV. An etching amount of the film due to a plasma containing mixture gas of CF4, Ar and O2 is smaller than that of alumina.</p> |
