| 摘要 |
A multi-body thickness (MBT) field effect transistor (FET) comprises a silicon body formed on a substrate. The silicon body may comprise a wide section and a narrow section between the wide section and the substrate. The silicon body may comprise more than one pair of a wide section and a narrow section, each pair being located at a different height of the silicon body. The silicon body is surrounded by a gate material on three sides. The substrate may be a bulk silicon substrate or a silicon-on-insulator (SOI) substrate. The MBT-FET combines the advantages of a wide fin device and a narrow fin device.
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