WIRING OF SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A wire of a semiconductor device and a method for forming the same are provided to reduce a bridge defect between neighboring conductive patterns and a disconnection of the conductive pattern by improving surface morphology characteristic of the conductive pattern. An interlayer dielectric(102) is located on a substrate(100) and includes an opening(104). A contact plug(108a) is gap-filled in the opening. The contact plug is made of a first tungsten(112) formed by a deposition process using a reaction of source gas. A conductive pattern(116) is contacted to an upper surface of the contact plug. The conductive pattern is a laminated shape of the first tungsten and a second tungsten(114) formed by a PVD(Physical Vapor Deposition) process. The deposition process for forming the first tungsten includes CVD(Chemical Vapor Deposition) and ALD(Atomic Layer Deposition). A thickness of the first tungsten included in the conductive pattern is 100 to 500 Å.