发明名称 |
Optically pumped semiconductor laser device |
摘要 |
An optically pumped semiconductor laser device having a surface-emitting vertical emission region ( 1 ) and at least one monolithically integrated pump radiation source ( 2 ) for optically pumping the vertical emission region ( 1 ). The semiconductor laser device is distinguished by the fact that the pump radiation enters the vertical emission region ( 1 ) in the form of partial bundles of rays of radiation with different radiation directions so that the pump radiation and the fundamental mode of the vertical emission region ( 1 ) have an overlap which is suitable for the excitation of this fundamental mode. This device is based on the fact that the fundamental mode of the vertical emission region ( 1 ) is preferably excited when the spatial intensity distribution of the pump radiation matches the profile of the fundamental mode.
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申请公布号 |
US7408972(B2) |
申请公布日期 |
2008.08.05 |
申请号 |
US20040579519 |
申请日期 |
2004.11.09 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
SCHMID WOLFGANG;BRICK PETER;LUTGEN STEPHAN;ALBRECHT TONY;EBERHARD FRANZ |
分类号 |
H01S3/091;H01H13/02;H01H13/14;H01H13/70;H01H13/705;H01H13/86;H01S3/08;H01S5/026;H01S5/04;H01S5/10;H01S5/183;H01S5/40 |
主分类号 |
H01S3/091 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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