| 摘要 |
An apparatus and a method for controlling a sequential bias of a high power amplifier are provided to prevent reduction of RF performance due to a parasitic component of an inductor by using a MOSFET instead of the inductor. A controller(203) supplies a gate voltage of a power amplifier(201) and supplies power to a switching unit after a predetermined time. The switching unit receives the power from the controller, connects a DC power supply with a drain terminal of the power amplifier, and supplies a drain voltage of the power amplifier. The power amplifier receives the gate voltage and the drain voltage in order to amplify a signal. The controller blocks forcedly the gate voltage and blocks sequentially the drain voltage when a driving operation of the power amplifier is finished.
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