| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to form a flash memory device by removing a metal from a residual region except for a RCS(Recess Common Source) region. A tunneling oxide layer(203), a floating gate(205), an ONO(Oxide Nitride Oxide) layer(207), and a control gate(209) are discriminated from each other on an active region of a semiconductor substrate(201) by using a gate pattern. An SAS(Self Aligned Source) region is defined on the control gate by performing a PEP(Photo Etching Process). A trench is formed in an RCS region by performing a RIE(Reactive Ion Etching) process on the SAS region. A sidewall oxide layer(215) is formed on the trench. A metal is formed on the sidewall oxide layer. The metal is removed from the residual region except for the RCS region by using a patterned negative photoresist as a mask.</p> |
