METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE

摘要

A method for forming a fine pattern of a semiconductor device is provided to implement the fine pattern having several nm units by using a photolithography process and a thermal oxidation process. A target layer(110) and a sacrificial layer(120) are sequentially laminated on a semiconductor substrate(100). A photoresist layer pattern having an opening unit is formed on the sacrificial layer. A part of a sacrificial layer being exposed by the opening unit is removed by using the photoresist layer pattern as an etching barrier to form a first pattern groove. The photoresist layer pattern is removed. Thermal oxidation is performed so that a width of the remaining sacrificial layer is reduced and an oxide layer(140) is formed. A second pattern groove(142) whose width is reduced by the oxide layer is formed in the first pattern groove. The oxide layer is removed to expose the sacrificial layer. The sacrificial layer remaining on the oxide layer is removed to form a first through hole. A fine pattern is formed on a target layer exposed by the first through hole by using the oxide layer on which the first through hole is formed as an etching barrier.