| 摘要 |
A production method for an anneal wafer which heat-treats a silicon single crystal wafer at least 200 mm in diameter, produced by a Czochralski (CZ) method, under an atmosphere of argon gas, hydrogen gas or a mixture gas of these at temperature as high as 1100-1350 [deg]C for 10-600 min, characterized in that a pre-anneal is carried out at temperatures lower than the above high heat treating temperature prior to the high-temperature heat treating to thereby grow oxygen deposits and restrict the growth of slip dislocation. The production method for an anneal wafer and an anneal wafer which restrict the occurrence and growth of slip dislocation to be caused by high-temperature heat treating and reduce the defect density of a wafer surface layer even in the case of a silicon single crystal wafer large in diameter of at least 200. |
