FLASH MEMORY DEVICE AND FABRICATION METHOD THEREOF

摘要

A flash memory device and a manufacturing method thereof are provided to adjust accurately a size and density of CdSe nano-particles by adjusting a mixing rate of the CdSe nano-particles and a polymer material. A semiconductor substrate(110) includes a source region(120) and a drain region(130). A source electrode(160) is positioned on the source region. A drain electrode(165) is positioned on the drain region. A gate electrode(150) is positioned on the semiconductor substrate between the source region and the drain region. A floating gate is inserted between the semiconductor substrate and the gate electrode to accumulate electric charges in an inversion layer of the semiconductor substrate according to a write voltage, to discharge the accumulated electric charges to the semiconductor substrate according to an erase voltage, and to determine a flow of drain current from the source region to the drain region according to a read voltage. A polymer layer including CdSe nano-particles is formed in the inside of the floating gate. The CdSe nano-particles are formed for capturing the electric charges generated from the inversion layer.