SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor memory device and a manufacturing method thereof are provided to increase the degree of integration by improving thermal interference generated between adjacent intersections. A first wiring(200) of a line type is formed on a substrate(100). A first interlayer dielectric having a first via hole is formed to expose an upper surface of the first wiring. A plurality of resistant memory material layers(300) are formed within the first via hole and are electrically connected to the first wiring. The resistant memory material layers have a constant height. A second wiring(400) of a line type is electrically connected to the resistant memory material layers. The resistant memory material layers are disposed perpendicularly to the substrate to obtain different resistivity profiles.