| 摘要 |
<p>A method for joining a semiconductor device is provided to control crack phenomena by forming a deep via for a heat sink. A first device and a second device on which plural metal lines are laminated are respectively formed. The first and second devices are joined to each other. A via for a heat sink is formed by also etching a part of a gap-fill layer of the second device. When the first and second devices are formed, a dielectric(102) is deposited on a semiconductor substrate(100), an upper metal layer(104) is formed on an upper portion thereof, and the gap-fill layer is formed. The gap-fill layer, the dielectric, the semiconductor substrate are sequentially etched to form the via. A patterning auxiliary layer is deposited on an upper portion of pattern on which the via is formed. A trench is formed. A diffusion preventive layer is deposited on an upper portion of the pattern on which the trench is formed. A metal material is formed on an upper surface of the diffusion preventing layer. The metal material is polished to expose the diffusion preventing layer. A recessing process is performed on parts of the patterning auxiliary layer and the diffusion preventing layer to form a metal pad.</p> |
