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发明名称
发光元件及其制造方法
摘要
在具有发光层部24之由III-V族化合物半导体所构成之主化合物半导体层50一方的主表面,具有将透明导电性半导体基板70直接贴合之构造,且将主化合物半导体层50与透明导电性半导体基板70之贴合界面的硷金属原子浓度调整在1×10#sP!14#eP!atoms/㎝#sP!2#eP!以上2×10#sP!15#eP!atoms/㎝#sP!2#eP!以下。藉此,提供一种可充分降低发光层部与透明导电性半导体基板之界面电阻的发光元件。
申请公布号
TW200832767
申请公布日期
2008.08.01
申请号
TW097103224
申请日期
2008.01.28
申请人
信越半导体股份有限公司
发明人
铃木由佳里;池田淳
分类号
H01L33/00(2006.01)
主分类号
H01L33/00(2006.01)
代理机构
代理人
桂齐恒;阎启泰
主权项
地址
日本
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