| 摘要 |
<p>A method for manufacturing a flash memory is provided to stabilize a program characteristic by maintaining constantly a thickness of a tunnel oxide layer of a lower part of a floating gate. A tunnel oxide layer(120), a floating gate layer(130), and an intergate insulating layer(140) are sequentially formed on a surface of a substrate(110). A sacrificial oxide layer is formed at the tunnel oxide layer and a sidewall of the floating gate layer. The substrate is etched by using a wet-etch method. A gate oxide layer(150) is formed on the substrate, the tunnel oxide layer, the floating gate layer, and the intergate insulating layer. A control gate layer(160) is formed to cover surfaces of the intergate insulating layer and the gate oxide layer.</p> |
