| 摘要 |
An electrolytic nickel plating device and a method for manufacturing a semiconductor device are provided to prevent deterioration of current efficiency and a film forming rate by using a nickel anode having an average of less than 10 grain. An electrolytic nickel plating device(100) has a nickel anode(105) having an average of less than 10‘í grain to restrict passivity of a surface of the nickel anode, thereby capable of deterioration of current efficiency and a film forming rate. The average of grain size of the electrolytic nickel plating device is less than 3‘í.
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