| 摘要 |
A semiconductor apparatus and a manufacturing method thereof are provided to stabilize contact resistance of a conductive plug and a conductive pattern by improving the closeness and adhesion in an interface between a barrier metal layer and a metal nitride layer. A conductive layer is formed on a substrate(10). A first dielectric is formed on the substrate and the conductive layer. A first hole(21a) is formed on the first dielectric over the conductive layer. A barrier metal layer(22a) is formed in the first hole and an upper surface of the conductive layer exposed to the first hole. Nitrogen density of the barrier metal layer is getting reduced, as getting closed to the conductive layer. Heat treatment is performed on the barrier metal layer. After the heat treatment is performed, a conductive layer for a plug is formed on the barrier metal layer. The process for forming the barrier metal layer includes a process for forming a metal layer on the conductive layer and a process for forming a metal nitride layer on the metal layer.
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