发明名称 PLASMA SHIELD FOR PROTECTING SEMICONDUCTOR CIRCUIT AREA
摘要 A plasma shielding layer for protecting a semiconductor circuit area is provided to prevent generation of arc defects caused by parasitic plasma. A plasma shielding layer(106) is used for protecting a semiconductor circuit area in a process for removing impurities from a wafer edge region. The plasma shielding layer is attached to an upper surface of a wafer to prevent permeation of plasma for removing the impurities to the semiconductor circuit region. The plasma shielding layer is made of a material layer. The material layer does not cause scratches on a surface of the wafer and includes a resistance to the plasma. The material layer is made of Teflon.
申请公布号 KR20080070909(A) 申请公布日期 2008.08.01
申请号 KR20070008779 申请日期 2007.01.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, YEONG CHEOL;PARK, SANG JUN;YOO, JOO BYOUNG;LEE, KYUNG WOO;JANG, YUN AH;JEON, HEE KYEONG
分类号 H01L21/304 主分类号 H01L21/304
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