METHOD OF FABRICATING FLASH MEMORY

摘要

A method for manufacturing a flash memory device is provided to remove defects of a blocking insulating layer by performing a high-temperature heat treatment process and a low-temperature heat treatment process. A tunneling insulating layer(110) is formed on a semiconductor substrate(100). An electric charge storage layer(120) is formed on the tunneling insulating layer. A blocking insulting layer(130) is formed on the electric charge storage layer. A high-temperature heat treatment process is performed on the semiconductor substrate including the blocking insulating layer. A low-temperature heat treatment process is performed on the semiconductor substrate at atmosphere of 2-100 pressure. An oxygen defect and an interface defect of the blocking insulating layer are cured by using steam.