发明名称 A MANUFACTURING METHOD OF HIGH DEGREE OF PURITY INDIUM OXIDE FROM ITO TARGET
摘要 A preparation method of highly pure indium oxide from ITO waste target scrap is provided to separate tin in a simple process by applying solubility property of In2O3 and SnO2 and to recover highly pure indium by employing anionic chelate resin. A preparation method of highly pure indium oxide from ITO waste target scrap comprises steps of: grinding waste ITO target scrap using Fe balls(S1); removing Fe by acid treatment on the ground powder(S2); dissolving indium selectively by nitric acid(S3); filtering the solution from the previous step in order to separate indium solution(S4); absorbing impurities in the indium solution by using chelate resin(S5); adding NH4OH to the solution from the previous step to obtain indium hydroxide(S6); washing and drying the obtained indium hydroxide, and calcining the dried powder at high temperature in order to oxidize indium hydroxide to indium oxide(S7); and obtaining highly pure indium oxide powder(S8). The acid in the step (S2) is nitric acid having purity of 70%. The chelate resin in the step (S5) is a resin comprising at least one of anionic resins of which terminal constitutes carboxylic acid or amino acetate. The chelate resin in the step (S5) performs in a strong acid of which pH is 2 or more.
申请公布号 KR100850009(B1) 申请公布日期 2008.08.01
申请号 KR20070029363 申请日期 2007.03.26
申请人 HEE SUNG METAL LTD. 发明人 KIM, KWAN SU;YANG, SEUNG HO;LIM, SUN KWON;KANG, MIN HO
分类号 C01G15/00 主分类号 C01G15/00
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