| 摘要 |
A non-volatile memory device and a manufacturing method thereof are provided to obtain uniform distribution by doping a metal dopant having fast mobility into a binary oxide layer. A non-volatile memory device includes a lower electrode(11), a binary oxide layer(12) doped with a metal, and an upper electrode formed on the binary oxide layer. The binary oxide layer is formed on the lower electrode. The doped metal of the binary oxide layer includes an atomic fraction of 5 percent and more. The binary oxide layer is MoOx, VOx, WOx, Ta2Ox, AlOx, HfOx, ZrOx, CoOx, or ZnOx. The metal doped on the binary oxide layer is Cu, Ag, Mg, or Al. The lower electrode is Cu, Ag, Au, Mg, or Al.
|
