| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses the operation of a parasitic bipolar element formed of guard rings to prevent the destruction of the element. SOLUTION: The semiconductor device includes a pad 1 for signal I/O, an N well 31 which has an ESD protective element 30 formed therein and is connected electrically to the pad 1 via contacts 33, a p-type guard ring 10 which is formed around the N well 31 to have a given width and is connected to a low-potential power source GND via contacts 13, and an n-type guard ring 20 which is formed around the p-type guard ring 10 to have a given width and is connected to a high-potential power source VDD via contacts 23. The contacts 23 are formed on areas on the n-type guard ring 20 that are other than those opposite to the contacts 33 across the p-type guard ring 10. COPYRIGHT: (C)2008,JPO&INPIT |
